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AO4496 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4496/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically identical. -RoHS Compliant -AO4496L is Halogen Free
Features
VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 19.5m (VGS = 10V) (VGS = 4.5V) RDS(ON) < 26m UIS TESTED! Rg, Ciss, Coss, Crss Tested
D S S S G D D D D S G
SOIC-8
Absolute Maximum Ratings TJ=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.1mH Power Dissipation
A G B
Maximum
30 20 10 7.5 50 17 14 3.1 2.0 -55 to 150
Units V V
TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG TA=25C TA=70C
A
mJ W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady State Steady State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID = 250A, VGS = 0V VDS = 30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 20V VDS = VGS ID = 250A VGS = 10V, VDS = 5V VGS = 10V, ID = 10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = 4.5V, ID = 7.5A Forward Transconductance VDS = 5V, ID = 10A Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current TJ=125C 1.4 50 16 24 21 30 0.76 1 3 550 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3 110 55 4 9.8 VGS=10V, VDS=15V, ID=10A 4.6 1.8 2.2 5 VGS=10V, VDS=15V, RL= 1.5, RGEN=3 IF=10A, dI/dt=100A/s 3.2 24 6 22 14 29 5.5 13 6.1 715 19.5 29 26 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m 1.8 Min 30 1 5 100 2.5 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev2: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 10V 40 30 ID (A) 3.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 26 VGS= 4.5V Normalized On-Resistance 24 RDS(ON) (m) 22 20 18 16 14 0 5 10 15 VGS= 10V 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID= 10A 1E+01 1E+00 1E-01 125C IS (A) 1E-02 125C VGS= 10V ID= 10A VGS= 4.5V ID= 7.5A ID(A) 4.5V 4V 50 VDS= 5V 40
30
20 125C 25C 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics
VGS= 3V
10
IF=-6.5A, dI/dt=100A/s 20 25 30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 45 40 RDS(ON) (m) 35 30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1E-03 25 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 20 25C 25C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 15 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 800 VDS= 15V ID= 10A Capacitance (pF) 600 Ciss
400
200 Crss 0 0 5 10
Coss
15
20
25
30
VDS (Volts) Figure 8: Capacitance Characteristics
100 10s 10 ID (Amps) RDS(ON) limited 100s 1ms 10ms 100ms 10s TJ(Max)=150C TA=25C 0.01 0.1 1 10 DC
1000
TJ(Max)=150C TA=25C
1
Power (W)
100
10
0.1
IF=-6.5A, dI/dt=100A/s
100 VDS (Volts)
1 0.0001
0.01
1
100
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VD C
10V
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg Vgs
DU T
+
VD C
90% Vdd 10% Vgs
t d(o n) tr t on
t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd
-
Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs Qrr = - Idt
Vds Vgs Ig
Isd
L
Isd
IF
+
VD C
dI/dt IRM
trr
Vdd Vds
-
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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